SKW 30N60
IGBT 30A/600V TO247
| Order Code: | SKW 30N60 |
| Packing unit: | 1 |
| Net price per pack: | US$ 23.53 |
| Amount equals to: | EUR 19.90 |
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G30N60 Datasheet, G30N60 PDF, G30N60 Data sheet, G30N60 manual, G30N60 pdf, G30N60, datenblatt, Electronics G30N60, alldatasheet, free, datasheet, Datasheets, data. My SCR tester made-from-a-flashlight will also test IGBTs and Mosfets. Add a 9 voltage battery in series with the gate lead. 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the.
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| European Euro | € | 19.90 |
| British Pound | UK£ | 17.16 |
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| Norwegian Krone | kr | 202.11 |
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SKW30N60HS - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: SKW30N60HS
Маркировка: K30N60HS
Тип управляющего канала: N-Channel
Максимальная рассеиваемая мощность (Pc): 250
Предельно-допустимое напряжение коллектор-эмиттер (Uce): 600
Напряжение насыщения коллектор-эмиттер (Ucesat): 2.8
Максимально допустимое напряжение эмиттер-затвор (Ueg): 20
Максимальный постоянный ток коллектора (Ic): 41
Максимальная температура перехода (Tj): 150
Время нарастания: 21
Емкость коллектора (Cc), pf: 203
Тип корпуса: TO247
SKW30N60HS Datasheet (PDF)
0.1. skw30n60hs.pdf Size:338K _infineon
SKW30N60HS^ High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: P-TO-247-3-1 - parallel switching capability (TO-247AC) - moderate Eoff increase with temperature - very tight parameter distribution
0.2. skw30n60hsg.pdf Size:348K _infineon
30n60 Mosfet Price
SKW30N60HSHigh Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: PG-TO-247-3 - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution High ruggedne
6.1. skw30n60g.pdf Size:319K _infineon
SKW30N60Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G Designed for: E- Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, t
6.2. skw30n60.pdf Size:471K _infineon
SKW30N60Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter ControlledDiodeC 75% lower Eoff compared to previous generationcombined with low conduction losses Short circuit withstand time 10 sG Designed for: E- Motor controls- Inverter NPT-Technology for 600V applications offers:- very tight parameter distribution- high ruggedn
Другие IGBT... STGWA19NC60HD, STGWA60NC60WDR, STGWF30NC60S, STGWT38IH130D, STGY40NC60VD, STGY50NC60WD, IKW30N100T, IKW08T120, GT60M102, IKW15T120, IKW25T120, IKW40T120, IKA06N60T, IKB06N60T, IKA10N60T, IKB10N60T, IKA15N60T.
Список транзисторов
Обновления
IGBT: FGL40N120AND | FGA40N65SMD | MGD622 | GT50N324 | BT60N60ANF | 2PG011 | MBQ40T65FDSC | IGF40T120F | FGPF30N45TTU | FGH40T65SHDF_F155 | IXBT15N170Mosfet 20n60
Data Set Mosfet 30n60